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BYG20G-HE3/TR PDF预览

BYG20G-HE3/TR

更新时间: 2024-11-15 04:12:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 89K
描述
DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA 2 PIN, Rectifier Diode

BYG20G-HE3/TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:ROHS COMPLIANT, PLASTIC, SMA 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.56

BYG20G-HE3/TR 数据手册

 浏览型号BYG20G-HE3/TR的Datasheet PDF文件第2页浏览型号BYG20G-HE3/TR的Datasheet PDF文件第3页浏览型号BYG20G-HE3/TR的Datasheet PDF文件第4页浏览型号BYG20G-HE3/TR的Datasheet PDF文件第5页 
BYG20D thru BYG20J  
Vishay General Semiconductor  
www.vishay.com  
Ultrafast Avalanche SMD Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated junction  
• Low reverse current  
• Soft recovery characteristics  
• Ultrafast reverse recovery time  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AC (SMA)  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency rectification of power supply,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.5 A  
VRRM  
IFSM  
IR  
200 V to 600 V  
30 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
1.0 μA  
1.4 V  
VF  
trr  
75 ns  
ER  
20 mJ  
TJ max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
BYG20D  
BYG20D  
200  
BYG20G  
BYG20G  
400  
BYG20J  
BYG20J  
600  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Average forward current  
VRRM  
IF(AV)  
V
A
1.5  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
30  
A
Pulse energy in avalanche mode,  
non repetitive (inductive load switch off)  
ER  
20  
mJ  
°C  
I(BR)R = 1 A, TJ = 25 °C  
Operating junction and storage temperature range TJ, TSTG  
- 55 to + 150  
Revision: 21-Dec-11  
Document Number: 88958  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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