Datasheet > BYG20J

BYG20J

更新时间： 2024-11-14 12:21:43

品牌	Logo	应用领域
台芯 - TAYCHIPST		二极管光电二极管软恢复二极管快速软恢复二极管
页数	文件大小	规格书
2页	3871K
描述
Fast Silicon Mesa SMD Rectifier

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中文翻译

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数据手册

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BYG20J 数据手册

BYG21K THRU BYG21M

800V-1000V

1.5A

Fast Silicon Mesa SMD Rectifier

FEATURES

Glass passivated junction

Low reverse current

Soft recovery characteristics

Fast reverse recovery time

Good switching characteristics

Wave and reflow solderable

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

Type

BYG21K

BYG21M V =V

Symbol

Value

800

1000

Unit

V =V

RRM

Peak forward surge current

t =10ms,

FSM

half sinewave

Average forward current

1.5

FAV

Junction and storage

temperature range

T =T

–55...+150

stg

Pulse energy in avalanche mode,

non repetitive

=1A, T =25 C

(BR)R

(inductive load switch off)

Maximum Thermal Resistance

Parameter

Junction lead

Junction ambient mounted on epoxy–glass hard tissue

Test Conditions

Symbol Value

Unit

K/W

T =const.

thJL

thJA

150

125

100

mounted on epoxy–glass hard tissue, 50mm 35 m Cu

mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu

Electrical Characteristics

Parameter

Test Conditions

Type

Symbol Min

Typ Max Unit

Forward voltage

I =1A

1.5

1.6

I =1.5A

Reverse current

V =V

RRM

, T =100 C

Reverse recovery time I =0.5A, I =1A, i =0.25A

120

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

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