BYG20JTR

更新时间： 2024-11-14 13:06:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	62K
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BYG20JTR 数据手册

BYG20

Vishay Telefunken

Fast Silicon Mesa SMD Rectifier

Features

Glass passivated junction

Low reverse current

Soft recovery characteristics

Fast reverse recovery time

Good switching characteristics

Wave and reflow solderable

15 811

Applications

Surface mounting

Fast rectifier

Freewheeling diodes in SMPS and converters

Snubber diodes

Absolute Maximum Ratings

T = 25 C

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

Type

Symbol

Value

200

400

600

Unit

BYG20D

BYG20G

BYG20J

V =V

RRM

V =V

Peak forward surge current

Average forward current

Junction and storage

temperature range

t =10ms,

half sinewave

FSM

1.5

–55...+150

FAV

T =T

stg

Pulse energy in avalanche mode,

non repetitive

=1A, T =25 C

(BR)R

(inductive load switch off)

Maximum Thermal Resistance

T = 25 C

Parameter

Junction lead

Junction ambient mounted on epoxy–glass hard tissue

Test Conditions

Symbol Value

Unit

K/W

T =const.

thJL

thJA

150

125

100

mounted on epoxy–glass hard tissue, 50mm 35 m Cu

mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu

Document Number 86009

Rev. 3, 24-Jun-98

www.vishay.de • FaxBack +1-408-970-5600

1 (5)

12 3 4 5

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