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BYG20J-E3/TR3 PDF预览

BYG20J-E3/TR3

更新时间: 2024-11-14 14:48:11
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管快速软恢复二极管局域网光电二极管
页数 文件大小 规格书
5页 99K
描述
DIODE 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA 2 PIN, Rectifier Diode

BYG20J-E3/TR3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.27
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:ULTRA FAST SOFT RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.4 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向电流:1 µA最大反向恢复时间:0.075 µs
子类别:Rectifier Diodes表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

BYG20J-E3/TR3 数据手册

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BYG20D, BYG20G, BYG20J  
www.vishay.com  
Vishay General Semiconductor  
Ultrafast Avalanche SMD Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Low reverse current  
Available  
• Soft recovery characteristics  
• Ultrafast reverse recovery time  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
SMA (DO-214AC)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in high frequency rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive, and telecommunication.  
IF(AV)  
1.5 A  
VRRM  
200 V, 400 V, 600 V  
30 A  
IFSM  
IR  
VF at IF  
trr  
1.0 μA  
MECHANICAL DATA  
Case: SMA (DO-214AC)  
1.4 V  
75 ns  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade   
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant and  
AEC-Q101 qualified  
ER  
20 mJ  
TJ max.  
Package  
Diode variations  
150 °C  
SMA (DO-214AC)  
Single  
(“_X” denotes revision code e.g. A, B,...)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
BYG20D  
BYG20D  
200  
BYG20G  
BYG20G  
400  
BYG20J  
BYG20J  
600  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Average forward current  
VRRM  
IF(AV)  
V
A
1.5  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
30  
A
Pulse energy in avalanche mode,  
non repetitive (inductive load switch off)  
ER  
20  
mJ  
°C  
I(BR)R = 1 A, TJ = 25 °C  
Operating junction and storage temperature range TJ, TSTG  
-55 to +150  
Revision: 17-Aug-17  
Document Number: 88958  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

BYG20J-E3/TR3 替代型号

型号 品牌 替代类型 描述 数据表
BYG20J-E3/TR VISHAY

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