Datasheet > BYG20G

BYG20G

更新时间： 2024-11-14 12:50:35

品牌	Logo	应用领域
台芯 - TAYCHIPST		二极管光电二极管功效
页数	文件大小	规格书
2页	3856K
描述
Fast Silicon Mesa SMD Rectifier

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中文翻译

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数据手册

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BYG20G 数据手册

BYG20D THRU BYG20J

200V-600V

1.5A

Fast Silicon Mesa SMD Rectifier

FEATURES

Glass passivated junction

Low reverse current

Soft recovery characteristics

Fast reverse recovery time

Good switching characteristics

Wave and reflow solderable

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

Type

Symbol

Value

200

400

600

Unit

BYG20D

BYG20G

BYG20J

V =V

RRM

V =V

Peak forward surge current

Average forward current

Junction and storage

temperature range

t =10ms,

half sinewave

FSM

1.5

–55...+150

FAV

T =T

stg

Pulse energy in avalanche mode,

non repetitive

=1A, T =25 C

(BR)R

(inductive load switch off)

Maximum Thermal Resistance

Parameter

Junction lead

Junction ambient mounted on epoxy–glass hard tissue

Test Conditions

Symbol Value

Unit

K/W

T =const.

thJL

thJA

150

125

100

mounted on epoxy–glass hard tissue, 50mm 35 m Cu

mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu

Electrical Characteristics

Parameter

Test Conditions

Type

Symbol Min

Typ Max Unit

Forward voltage

I =1A

1.3

1.4

I =1.5A

Reverse current

V =V

RRM

, T =100 C

Reverse recovery time I =0.5A, I =1A, i =0.25A

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

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