Datasheet > BYG10M

BYG10M

更新时间： 2024-10-29 12:55:07

品牌	Logo	应用领域
台芯 - TAYCHIPST		/
页数	文件大小	规格书
2页	3836K
描述
Silicon Mesa SMD Rectifier

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中文翻译

获取价格

数据手册

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BYG10M 数据手册

BYG10D THRU BYG10M

200V-1000V

1.5A

Silicon Mesa SMD Rectifier

FEATURES

Controlled avalanche characteristics

Glass passivated junction

Low reverse current

High surge current capability

Wave and reflow solderable

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

Type

Symbol

Value

200

400

600

800

1000

Unit

BYG10D

BYG10G

BYG10J

BYG10K

V =V

RRM

V =V

BYG10M V =V

Peak forward surge current

Average forward current

t =10ms,

half sinewave

FSM

1.5

FAV

Junction and storage

temperature range

T =T

–55...+150

stg

Pulse energy in avalanche mode,

non repetitive

=1A, T =25 C

(BR)R

(inductive load switch off)

Maximum Thermal Resistance

Parameter

Junction lead

Junction ambient mounted on epoxy–glass hard tissue

Test Conditions

Symbol

Unit

K/W

Value

150

125

100

T =const.

thJL

thJA

mounted on epoxy–glass hard tissue, 50mm 35 m Cu

mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu

Electrical Characteristics

Type

Parameter

Test Conditions

Symbol Min

Typ Max Unit

Forward voltage

I =1A

1.1

1.15

I =1.5A

Reverse current

V =V

RRM

, T =100 C

Reverse recovery time I =0.5A, I =1A, i =0.25A

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