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BYG10K-E3/TR PDF预览

BYG10K-E3/TR

更新时间: 2024-10-29 14:48:11
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
5页 103K
描述
DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode

BYG10K-E3/TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.3
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:4 µs
子类别:Rectifier Diodes表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BYG10K-E3/TR 数据手册

 浏览型号BYG10K-E3/TR的Datasheet PDF文件第2页浏览型号BYG10K-E3/TR的Datasheet PDF文件第3页浏览型号BYG10K-E3/TR的Datasheet PDF文件第4页浏览型号BYG10K-E3/TR的Datasheet PDF文件第5页 
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y  
www.vishay.com  
Vishay General Semiconductor  
Standard Avalanche SMD Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Controlled avalanche characteristics  
• Glass passivated pellet chip junction  
Available  
• Low reverse current  
• High surge current capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
SMA (DO-214AC)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
IF(AV)  
1.5 A  
For use in general purpose rectification of power supplies,  
inverters, converters, and freewheeling diodes for  
consumer, automotive, and telecommunication.  
200 V, 400 V, 600 V, 800 V,  
1000 V, 1600 V  
VRRM  
IFSM  
30 A  
1.0 μA  
MECHANICAL DATA  
Case: SMA (DO-214AC)  
IR  
VF  
ER  
1.15 V  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade   
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant and  
AEC-Q101 qualified  
20 mJ  
TJ max.  
150 °C  
Package  
SMA (DO-214AC)  
Single  
Circuit configuration  
(“_X” denotes revision code e.g. A, B,...)  
Terminals: matte tin plated leads, solderable per J-STD-002  
and JESD 22-B102  
E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test  
Polarity: color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT  
Device marking code  
BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y  
Maximum repetitive peak reverse voltage  
Average forward current  
VRRM  
IF(AV)  
200  
400  
600  
800  
1000  
1600  
V
A
1.5  
30  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
Pulse energy in avalanche mode,  
non repetitive (inductive load switch off)  
ER  
20  
mJ  
°C  
I
(BR)R = 1 A, TJ = 25 °C (for BYG10D thru BYG10M)  
(BR)R = 0.4 A, TJ = 25 °C (for BYG10Y)  
I
Operating junction and storage temperature range TJ, TSTG  
-55 to +150  
Revision: 15-May-2018  
Document Number: 88957  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

BYG10K-E3/TR 替代型号

型号 品牌 替代类型 描述 数据表
S2K-E3/52T VISHAY

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DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 P

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