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BYG10GHM3/TR3 PDF预览

BYG10GHM3/TR3

更新时间: 2024-10-29 19:56:23
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
5页 90K
描述
DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode

BYG10GHM3/TR3 技术参数

生命周期:Obsolete包装说明:R-PDSO-C2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.6
Base Number Matches:1

BYG10GHM3/TR3 数据手册

 浏览型号BYG10GHM3/TR3的Datasheet PDF文件第2页浏览型号BYG10GHM3/TR3的Datasheet PDF文件第3页浏览型号BYG10GHM3/TR3的Datasheet PDF文件第4页浏览型号BYG10GHM3/TR3的Datasheet PDF文件第5页 
BYG10D thru BYG10Y  
Vishay General Semiconductor  
www.vishay.com  
Standard Avalanche SMD Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Controlled avalanche characteristics  
• Glass passivated junction  
• Low reverse current  
• High surge current capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AC (SMA)  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21 definition  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.5 A  
VRRM  
IFSM  
IR  
200 V to 1600 V  
30 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
1.0 μA  
VF  
1.15 V  
ER  
20 mJ  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
TJ max.  
150 °C  
commercial grade  
Base P/NHM3 - halogen-free, RoHS compliant, and  
AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per J-STD-002  
and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
Note  
BYG10Y for commercial grade only  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT  
Device marking code  
BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y  
Maximum repetitive peak reverse voltage  
Average forward current  
VRRM  
IF(AV)  
200  
400  
600  
800  
1000  
1600  
V
A
1.5  
30  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
Pulse energy in avalanche mode,  
non repetitive (inductive load switch off)  
ER  
20  
mJ  
°C  
I(BR)R = 1 A, TJ = 25 °C (for BYG10D thru BYG10M)  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Revision: 23-Dec-11  
Document Number: 89472  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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