Datasheet > BYG10J

BYG10J

更新时间： 2024-10-29 12:56:55

品牌	Logo	应用领域
森美特 - SUNMATE		二极管光电二极管 IOT 局域网
页数	文件大小	规格书
2页	305K
描述
1.5A patch fast recovery diode 600V SMA series

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BYG10J 数据手册

BYG10D - BYG10M

SURFACE MOUNT SILICON MESA (SMD) RECTIFIER DIODE

VOLTAGE RANGE: 200 - 1000V

CURRENT: 1.5 A

Features

Controlled avalanche characteristics

Glass passivated junction

Low reverse current

High surge current capability

Wave and reflow solderable

SMA(DO-214AC)

Dim

MinMax

Mechanical Data

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

Type

Symbol

Value

200

400

600

800

1000

Unit

BYG10D

BYG10G

BYG10J

BYG10K

V =V

RRM

V =V

BYG10M V =V

Peak forward surge current

Average forward current

Junction and storage

temperature range

t =10ms,

half sinewave

FSM

1.5

–55...+150

FAV

T =T

stg

Pulse energy in avalanche mode,

non repetitive

=1A, T =25 C

(BR)R

(inductive load switch off)

Maximum Thermal ResistancejT = 25C

Parameter

Test Conditions

Symbol Value

Unit

K/W

Junction lead

Junction ambient mounted on epoxy–glass hard tissue

mounted on epoxy–glass hard tissue, 50mm 35 m Cu

T =const.

thJL

thJA

150

125

100

mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu

Electrical CharacteristicsjT = 25C

Parameter

Test Conditions

Type Symbol Min

Typ Max Unit

Forward voltage

I =1A

1.1

1.15

I =1.5A

Reverse current

V =V

RRM

, T =100 C

Reverse recovery time I =0.5A, I =1A, i =0.25A

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