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BYG10J

更新时间: 2024-10-28 22:28:03
品牌 Logo 应用领域
威世 - VISHAY 整流二极管光电二极管IOT局域网
页数 文件大小 规格书
5页 63K
描述
Silicon Mesa SMD Rectifier

BYG10J 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.53
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 V最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:150 °C
最大输出电流:1.5 A最大重复峰值反向电压:600 V
最大反向恢复时间:4 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

BYG10J 数据手册

 浏览型号BYG10J的Datasheet PDF文件第2页浏览型号BYG10J的Datasheet PDF文件第3页浏览型号BYG10J的Datasheet PDF文件第4页浏览型号BYG10J的Datasheet PDF文件第5页 
BYG10  
Vishay Telefunken  
Silicon Mesa SMD Rectifier  
Features  
Controlled avalanche characteristics  
Glass passivated junction  
Low reverse current  
High surge current capability  
Wave and reflow solderable  
15 811  
Applications  
Surface mounting  
General purpose rectifier  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
200  
400  
600  
800  
1000  
30  
Unit  
V
V
V
V
BYG10D  
BYG10G  
BYG10J  
BYG10K  
V =V  
R
RRM  
RRM  
RRM  
RRM  
RRM  
V =V  
R
V =V  
R
V =V  
R
BYG10M V =V  
V
A
R
Peak forward surge current  
Average forward current  
Junction and storage  
temperature range  
t =10ms,  
half sinewave  
I
p
FSM  
I
1.5  
–55...+150  
A
C
FAV  
T =T  
j
stg  
Pulse energy in avalanche mode,  
non repetitive  
I
=1A, T =25 C  
E
R
20  
mJ  
(BR)R  
j
(inductive load switch off)  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction lead  
Junction ambient mounted on epoxy–glass hard tissue  
Test Conditions  
Symbol Value  
Unit  
K/W  
K/W  
K/W  
K/W  
T =const.  
L
R
25  
thJL  
thJA  
thJA  
thJA  
R
R
R
150  
125  
100  
2
mounted on epoxy–glass hard tissue, 50mm 35 m Cu  
2
mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu  
2
3
Document Number 86008  
Rev. 3, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  

BYG10J 替代型号

型号 品牌 替代类型 描述 数据表
BYG10J-E3 VISHAY

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