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BYG10J PDF预览

BYG10J

更新时间: 2024-10-29 12:55:07
品牌 Logo 应用领域
台芯 - TAYCHIPST 二极管光电二极管IOT局域网
页数 文件大小 规格书
2页 3836K
描述
Silicon Mesa SMD Rectifier

BYG10J 数据手册

 浏览型号BYG10J的Datasheet PDF文件第2页 
BYG10D THRU BYG10M  
200V-1000V  
1.5A  
Silicon Mesa SMD Rectifier  
FEATURES  
Controlled avalanche characteristics  
Glass passivated junction  
Low reverse current  
High surge current capability  
Wave and reflow solderable  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Absolute Maximum Ratings  
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
200  
400  
600  
800  
1000  
30  
Unit  
BYG10D  
BYG10G  
BYG10J  
BYG10K  
V =V  
V
V
V
V
V
A
R
RRM  
RRM  
RRM  
RRM  
RRM  
V =V  
R
V =V  
R
V =V  
R
BYG10M V =V  
R
Peak forward surge current  
Average forward current  
t =10ms,  
half sinewave  
I
FSM  
p
I
1.5  
A
FAV  
Junction and storage  
temperature range  
T =T  
–55...+150  
C
j
stg  
Pulse energy in avalanche mode,  
non repetitive  
I
=1A, T =25 C  
E
R
20  
mJ  
(BR)R  
j
(inductive load switch off)  
Maximum Thermal Resistance  
Parameter  
Junction lead  
Junction ambient mounted on epoxy–glass hard tissue  
Test Conditions  
Symbol  
Unit  
K/W  
K/W  
K/W  
K/W  
Value  
25  
150  
125  
100  
T =const.  
R
L
thJL  
thJA  
thJA  
thJA  
R
R
R
2
mounted on epoxy–glass hard tissue, 50mm 35 m Cu  
2
mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu  
2
3
Electrical Characteristics  
Type  
Parameter  
Test Conditions  
Symbol Min  
Typ Max Unit  
Forward voltage  
I =1A  
V
V
1.1  
1.15  
1
10  
4
V
V
A
A
s
F
F
F
I =1.5A  
F
Reverse current  
V =V  
V =V  
R
I
I
R
RRM  
RRM  
R
, T =100 C  
j
R
Reverse recovery time I =0.5A, I =1A, i =0.25A  
t
rr  
F
R
R
E-mail: sales@taychipst.com  
Web Site: www.taychipst.com  
1 of 2  

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