Datasheet > BUZ80AFI

BUZ80AFI

更新时间： 2024-09-26 23:38:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
10页	200K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(197.88 k)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BUZ80AFI 数据手册

BUZ80A

BUZ80AFI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

BUZ80A

BUZ80AFI

V_DSS

R_DS(on)

I_D

800 V

< 3 Ω

3.8 A

2.4 A

■

TYPICAL R_DS(on)= 2.5 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW INPUT CAPACITANCE

LOW GATE CHARGE

APPLICATION ORIENTED

CHARACTERIZATION

TO-220

ISOWATT220

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

CONSUMER AND INDUSTRIAL LIGHTING

DC-AC INVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLY (UPS)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

BUZ80A

BUZ80AFI

V_DS

V_{DG R}

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

800

± 20

3.8

2.3

2.4

1.4

I_D

I_DM(•)

P_tot

Total Dissipation at T_c= 25 ^oC

100

0.8

W/^oC

^oC

Derating Factor

0.32

2000

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

April 1993

12 3 4 5 6 7...10

中文翻译

下载PDF

与BUZ80AFI相关器件

型号	品牌	获取价格	描述	数据表
BUZ80-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal
BUZ80-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal
BUZ80F	ETC	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(196.99 k)
BUZ80FI	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
BUZ81	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ81-E3044	INFINEON	获取价格	Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal
BUZ81-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal
BUZ81-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal
BUZ83	INFINEON	获取价格	main ratings
BUZ83A	INFINEON	获取价格	main ratings