生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.3 |
雪崩能效等级(Eas): | 410 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 800 V | 最大漏极电流 (ID): | 4 A |
最大漏源导通电阻: | 2.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 16 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUZ81-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal | |
BUZ83 | INFINEON |
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main ratings | |
BUZ83A | INFINEON |
获取价格 |
main ratings | |
BUZ84 | NJSEMI |
获取价格 |
Trans MOSFET N-CH 800V 3.4A 3-Pin(3+Tab) TO-220 | |
BUZ84A | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 6A I(D) | TO-204AA | |
BUZ88 | INFINEON |
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main ratings | |
BUZ88A | INFINEON |
获取价格 |
main ratings | |
BUZ90 | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |
BUZ900 | NJSEMI |
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Trans MOSFET N-CH 160V 8A 3-Pin(2+Tab) TO-3 | |
BUZ900CDP | ETC |
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TRANSISTOR AUDIO NF LEISTUNGS MOSFET |