生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.26 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 800 V |
最大漏极电流 (ID): | 2.6 A | 最大漏源导通电阻: | 4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 10 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUZ80-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal | |
BUZ80F | ETC |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(196.99 k) | |
BUZ80FI | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
BUZ81 | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |
BUZ81-E3044 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal | |
BUZ81-E3045 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal | |
BUZ81-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal | |
BUZ83 | INFINEON |
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main ratings | |
BUZ83A | INFINEON |
获取价格 |
main ratings | |
BUZ84 | NJSEMI |
获取价格 |
Trans MOSFET N-CH 800V 3.4A 3-Pin(3+Tab) TO-220 |