Datasheet > BUZ80F

BUZ80F

更新时间： 2024-09-26 23:38:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
10页	199K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(196.99 k)

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BUZ80F 数据手册

BUZ80

BUZ80FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

BUZ80

BUZ80FI

V_DSS

R_DS(on)

I_D

800 V

< 4 Ω

3.4 A

2.1 A

■

TYPICAL R_DS(on)= 3.3 Ω

AVALANCHE RUGGEDNESS TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW INPUT CAPACITANCE

LOW GATE CHARGE

APPLICATION ORIENTED

CHARACTERIZATION

TO-220

ISOWATT220

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

CONSUMER AND INDUSTRIAL LIGHTING

DC-AC INVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLY (UPS)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

BUZ80

BUZ80FI

V_DS

V_{DG R}

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

800

± 20

3.4

2.1

1.3

I_D

I_DM(•)

P_tot

Total Dissipation at T_c= 25 ^oC

100

0.8

W/^oC

^oC

Derating Factor

0.32

2000

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

April 1993

12 3 4 5 6 7...10

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