生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.69 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 16 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 100 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 12 MHz |
最大关闭时间(toff): | 1820 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUL46 | ANALOGICTECH |
获取价格 |
POWER TRANSISTORS | |
BUL46A | ANALOGICTECH |
获取价格 |
POWER TRANSISTORS | |
BUL46A | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 | |
BUL46B | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 | |
BUL47A | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL47B | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 | |
BUL48 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB | |
BUL48A | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | |
BUL48B | SEME-LAB |
获取价格 |
Bipolar NPN Device. | |
BUL49A | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |