生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
其他特性: | LOGIC LEVEL, VOLTAGE CLAMPING | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 20 A | 集电极-发射极最大电压: | 500 V |
配置: | SINGLE WITH BUILT-IN DIODE | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AUTOMOTIVE IGNITION | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 19000 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK856-400IZ127 | NXP |
获取价格 |
TRANSISTOR 20 A, 500 V, N-CHANNEL IGBT, TO-220AB, Insulated Gate BIP Transistor | |
BUK856-450IX | NXP |
获取价格 |
TRANSISTOR 15 A, N-CHANNEL IGBT, TO-220AB, Insulated Gate BIP Transistor | |
BUK856-450IX | PHILIPS |
获取价格 |
Insulated Gate Bipolar Transistor, 8A I(C), 500V V(BR)CES, N-Channel, | |
BUK856-800 | NXP |
获取价格 |
Insulated Gate Bipolar Transistor IGBT | |
BUK856-800A | NXP |
获取价格 |
Insulated Gate Bipolar Transistor IGBT | |
BUK866-400IZ | NXP |
获取价格 |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT | |
BUK866-400IZ/T3 | NXP |
获取价格 |
TRANSISTOR 20 A, 500 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
BUK866-400IZT/R | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | SOT-404 | |
BUK9006-55A | NXP |
获取价格 |
N-channel Enhancement mode field-effect power Transistor | |
BUK9107-40ATC | NXP |
获取价格 |
N-channel TrenchPLUS logic level FET |