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BUK9107-55ATE,118 PDF预览

BUK9107-55ATE,118

更新时间: 2024-10-01 14:41:11
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
15页 238K
描述
N-channel TrenchPLUS logic level FET D2PAK 5-Pin

BUK9107-55ATE,118 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:D2PAK包装说明:PLASTIC, D2PAK-5
针数:5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.2雪崩能效等级(Eas):500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0077 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):272 W
最大脉冲漏极电流 (IDM):560 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK9107-55ATE,118 数据手册

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BUK9107-55ATE  
N-channel TrenchPLUS logic level FET  
Rev. 02 — 16 February 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. The devices include TrenchPLUS diodes for  
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been  
designed and qualified to the appropriate AEC standard for use in automotive critical  
applications.  
1.2 Features and benefits  
„ Allows responsive temperature  
monitoring due to integrated  
temperature sensor  
„ Electrostatically robust due to  
integrated protection diodes  
„ Low conduction losses due to low  
„ Q101 compliant  
on-state resistance  
1.3 Applications  
„ 12 V and 24 V high power motor  
„ Electrical Power Assisted Steering  
drives  
(EPAS)  
„ Automotive and general purpose  
„ Protected drive for lamps  
power switching  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
VDS  
ID  
drain-source voltage  
Tj 25 °C; Tj 175 °C  
-
[1] -  
-
-
-
-
-
55  
V
drain current  
VGS = 5 V; Tmb = 25 °C; see Figure 2 and 3  
Tmb = 25 °C; see Figure 1  
140  
272  
A
Ptot  
Tj  
total power dissipation  
junction temperature  
W
-55  
175 °C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 4.5 V; ID = 50 A; Tj = 25 °C  
-
-
-
6
7.7  
6.2  
7
mΩ  
VGS = 10 V; ID = 50 A; Tj = 25 °C  
5.2  
5.8  
mΩ  
mΩ  
VGS = 5 V; ID = 50 A; Tj = 25 °C; see Figure 7 and 8  
SF(TSD) temperature sense diode IF = 250 µA; Tj > -55 °C; Tj < 175 °C  
temperature coefficient  
-1.4 -1.54 -1.68 mV/K  
VF(TSD) temperature sense diode IF = 250 µA; Tj = 25 °C  
forward voltage  
648 658 668 mV  
[1] Current is limited by power dissipation chip rating.  
 
 
 
 
 
 

BUK9107-55ATE,118 替代型号

型号 品牌 替代类型 描述 数据表
BUK9107-55ATE NXP

完全替代

N-channel TrenchPLUS logic level FET

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