Datasheet > BUK9214-75B

BUK9214-75B

更新时间： 2024-09-30 22:40:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
10页	218K
描述
TrenchMOS logic level FET

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中文翻译

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数据手册

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BUK9214-75B 数据手册

BUK9214-75B

TrenchMOS™ logic level FET

Rev. 01 — 10 December 2002

Objective data

M3D300

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very

low on-state resistance.

Product availability:

BUK9214-75B in SOT428 (D-PAK)

1.2 Features

■ TrenchMOS^TMtechnology

■ 175 °C rated

■ Q101 compliant

■ Logic level compatible

1.3 Applications

■ Automotive systems

■ 12 V, 24 V, and 42 V loads

■ Motors, lamps and solenoids

■ General purpose power switching

1.4 Quick reference data

■ E_DS(AL)S≤ 131 mJ

■ I_D≤ 71 A

■ R_DSon= 11.9 mΩ (typ)

■ P_tot≤ 150 W

2. Pinning information

Table 1:

Pinning - SOT428 (D-PAK), simpliﬁed outline and symbol

Pin Description

Simpliﬁed outline

Symbol

gate (g)

[1]

drain (d)

source (s)

mb mounting base;

connected to

MBB076

drain (d)

Top view

MBK091

SOT428 (D-PAK)

[1] It is not possible to make connection to pin 2 of the SOT428 package.

12 3 4 5 6 7...10

中文翻译

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