Datasheet > BUK9230-55A/C,118

BUK9230-55A/C,118

更新时间： 2024-11-21 21:16:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	169K
描述
BUK9230-55A - N-channel TrenchMOS logic level FET

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BUK9230-55A/C,118 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.6	Base Number Matches：	1

BUK9230-55A/C,118 数据手册

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BUK9230-55A

N-channel TrenchMOS logic level FET

Rev. 04 — 15 June 2010

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 Low conduction losses due to low

 Suitable for logic level gate drive

on-state resistance

sources

 Q101 compliant

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V and 24 V loads

 Motors, lamps and solenoids

 Automotive and general purpose

power switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

I_D

drain current

V_GS= 5 V; T_mb= 25 °C;

see Figure 1; see Figure 3

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source

V_GS= 4.5 V; I_D= 15 A;

T_j= 25 °C

mΩ

on-state

resistance

V_GS= 10 V; I_D= 15 A;

T_j= 25 °C

V_GS= 5 V; I_D= 15 A;

T_j= 25 °C;

see Figure 12; see Figure 13

Avalanche ruggedness

E_DS(AL)S

non-repetitive

drain-source

I_D= 34 A; V_sup≤ 55 V;

R_GS= 50 Ω; V_GS= 5 V;

57.8 mJ

avalanche energy T_j(init)= 25 °C; unclamped

12 3 4 5 6 7...14

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