BUK9506-55B

更新时间： 2024-11-11 06:44:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	188K
描述
N-channel TrenchMOS FET

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BUK9506-55B 数据手册

BUK9506-55B

N-channel TrenchMOS FET

Rev. 04 — 23 July 2009

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

TrenchMOS technology. This product has been designed and qualified to the appropriate

AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

Suitable for logic level gate drive

on-state resistance

sources

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V and 24 V loads

Automotive systems

General purpose power switching

Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

[1]

drain current

V_GS= 5 V; T_mb= 25 °C;

see Figure 1 and 3

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

258

679

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

I_D= 75 A; V_sup≤ 55 V;

R_GS= 50 Ω; V_GS= 5 V;

T_j(init)= 25 °C; unclamped

avalanche energy

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 5 V; I_D= 25 A;

V_DS= 44 V; T_j= 25 °C;

see Figure 14 and 15

12 3 4 5 6 7...13

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