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BUK9506-55B PDF预览

BUK9506-55B

更新时间: 2024-10-01 06:44:39
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 188K
描述
N-channel TrenchMOS FET

BUK9506-55B 数据手册

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BUK9506-55B  
N-channel TrenchMOS FET  
Rev. 04 — 23 July 2009  
Product data sheet  
1. Product profile  
1.1 General description  
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using  
TrenchMOS technology. This product has been designed and qualified to the appropriate  
AEC standard for use in automotive critical applications.  
1.2 Features and benefits  
„ Low conduction losses due to low  
„ Suitable for logic level gate drive  
on-state resistance  
sources  
„ Q101 compliant  
„ Suitable for thermally demanding  
environments due to 175 °C rating  
1.3 Applications  
„ 12 V and 24 V loads  
„ Automotive systems  
„ General purpose power switching  
„ Motors, lamps and solenoids  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj 25 °C; Tj 175 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
55  
75  
V
A
[1]  
drain current  
VGS = 5 V; Tmb = 25 °C;  
see Figure 1 and 3  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
-
-
-
-
258  
679  
W
Avalanche ruggedness  
EDS(AL)S non-repetitive  
drain-source  
ID = 75 A; Vsup 55 V;  
RGS = 50 ; VGS = 5 V;  
Tj(init) = 25 °C; unclamped  
mJ  
avalanche energy  
Dynamic characteristics  
QGD  
gate-drain charge  
VGS = 5 V; ID = 25 A;  
VDS = 44 V; Tj = 25 °C;  
see Figure 14 and 15  
-
22  
-
nC  

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