BUK95150-55A

更新时间： 2024-09-30 22:32:31

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
9页	74K
描述
TrenchMOS transistor standard level FET

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BUK95150-55A 数据手册

Philips Semiconductors

Product specification

TrenchMOS transistor

Logic level FET

BUK95150-55A

BUK96150-55A

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode logic

level field-effect power transistor in a

plastic envelope available in

TO220AB and SOT404 . Using

’trench’ technology which features

very low on-state resistance. It is

intended for use in automotive and

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

P_tot

T_j

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

˚C

175

R_DS(ON)

general

purpose

switching

resistance

_GS= 5 V

150

137

mΩ

applications.

V_GS= 10 V

PINNING

TO220AB & SOT404

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

tab

gate

drain

source

2 3

TO220AB

SOT404

tab/mb drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Non-repetitive gate-source voltage t_p≤50µS

V_DGR

±V_GS

±V_GSM

R_GS= 20 kΩ

I_D

I_DM

P_tot

T_stg, T_j

Drain current (DC)

Drain current (pulse peak value)

Total power dissipation

Storage & operating temperature

T_mb= 25 ˚C

175

˚C

T_mb= 100 ˚C

T_mb= 25 ˚C

- 55

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to

mounting base

Thermal resistance junction to

ambient(TO220AB)

Thermal resistance junction to

ambient(SOT404)

2.8

K/W

in free air

K/W

Minimum footprint, FR4

board

February 2000

Rev 1.000

12 3 4 5 6 7...9

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