Datasheet > BUK9277-55A/CD

BUK9277-55A/CD

更新时间： 2024-11-21 20:06:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	293K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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技术参数
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BUK9277-55A/CD 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

BUK9277-55A/CD 数据手册

BUK9277-55A

N-channel TrenchMOS logic level FET

12 June 2014

Product data sheet

1. General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

2. Features and benefits

Q101 compliant

•

Suitable for logic level gate drive sources

Suitable for thermally demanding environments due to 175 °C rating

3. Applications

12 V and 24 V loads

Automotive and general purpose power switching

Motors, lamps and solenoids

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 2; Fig. 3

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 10 A; T_j= 25 °C

V_GS= 4.5 V; I_D= 10 A; T_j= 25 °C

V_GS= 5 V; I_D= 10 A; T_j= 25 °C; Fig. 13

mΩ

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-

I_D= 18 A; V_sup≤ 55 V; R_GS= 50 Ω;

V_GS= 5 V; T_j(init)= 25 °C; unclamped

source avalanche

energy

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