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BUK9219-55A,118 PDF预览

BUK9219-55A,118

更新时间: 2024-10-01 14:41:11
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
14页 181K
描述
N-channel TrenchMOS logic level FET DPAK 3-Pin

BUK9219-55A,118 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DPAK包装说明:PLASTIC, SC-63, DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.18雪崩能效等级(Eas):120 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):55 A
最大漏极电流 (ID):55 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):114 W最大脉冲漏极电流 (IDM):219 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUK9219-55A,118 数据手册

 浏览型号BUK9219-55A,118的Datasheet PDF文件第2页浏览型号BUK9219-55A,118的Datasheet PDF文件第3页浏览型号BUK9219-55A,118的Datasheet PDF文件第4页浏览型号BUK9219-55A,118的Datasheet PDF文件第5页浏览型号BUK9219-55A,118的Datasheet PDF文件第6页浏览型号BUK9219-55A,118的Datasheet PDF文件第7页 
BUK9219-55A  
N-channel TrenchMOS logic level FET  
Rev. 02 — 7 June 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product has been designed and qualified to  
the appropriate AEC standard for use in automotive critical applications.  
1.2 Features and benefits  
„ Low conduction losses due to low  
„ Suitable for logic level gate drive  
on-state resistance  
sources  
„ Q101 compliant  
„ Suitable for thermally demanding  
environments due to 175 °C rating  
1.3 Applications  
„ 12 V and 24 V loads  
„ Motors, lamps and solenoids  
„ Automotive and general purpose  
power switching  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source  
voltage  
Tj 25 °C; Tj 175 °C  
-
-
-
-
-
-
55  
V
ID  
drain current  
VGS = 5 V; Tmb = 25 °C;  
55  
A
see Figure 1; see Figure 3  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
114  
W
 
 
 
 
 

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