Datasheet > BUK9219-55A/C,118

BUK9219-55A/C,118

更新时间： 2024-10-01 14:41:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	181K
描述
BUK9219-55A - N-channel TrenchMOS logic level FET

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技术参数
数据手册

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BUK9219-55A/C,118 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.72	Base Number Matches：	1

BUK9219-55A/C,118 数据手册

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BUK9219-55A

N-channel TrenchMOS logic level FET

Rev. 02 — 7 June 2010

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

Suitable for logic level gate drive

on-state resistance

sources

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V and 24 V loads

Motors, lamps and solenoids

Automotive and general purpose

power switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

I_D

drain current

V_GS= 5 V; T_mb= 25 °C;

see Figure 1; see Figure 3

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

114

12 3 4 5 6 7...14

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