5秒后页面跳转
BUK856-800A PDF预览

BUK856-800A

更新时间: 2024-01-04 23:14:51
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管双极性晶体管
页数 文件大小 规格书
7页 64K
描述
Insulated Gate Bipolar Transistor IGBT

BUK856-800A 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.84
外壳连接:COLLECTOR最大集电极电流 (IC):24 A
集电极-发射极最大电压:800 V配置:SINGLE
最大降落时间(tf):800 ns门极发射器阈值电压最大值:5.5 V
门极-发射极最大电压:30 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:125 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON最大关闭时间(toff):450 ns
标称断开时间 (toff):300 ns标称接通时间 (ton):70 ns
VCEsat-Max:3.5 V

BUK856-800A 数据手册

 浏览型号BUK856-800A的Datasheet PDF文件第2页浏览型号BUK856-800A的Datasheet PDF文件第3页浏览型号BUK856-800A的Datasheet PDF文件第4页浏览型号BUK856-800A的Datasheet PDF文件第5页浏览型号BUK856-800A的Datasheet PDF文件第6页浏览型号BUK856-800A的Datasheet PDF文件第7页 
Philips Semiconductors  
Product Specification  
Insulated Gate Bipolar Transistor (IGBT)  
BUK856-800A  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Fast-switching N-channel insulated  
gate bipolar power transistor in a  
plastic envelope.  
The device is intended for use in  
motor control, DC/DC and AC/DC  
converters, and in general purpose  
high frequency switching  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VCE  
IC  
Ptot  
VCEsat  
Eoff  
Collector-emitter voltage  
Collector current (DC)  
Total power dissipation  
Collector-emitter on-state voltage  
Turn-off energy Loss  
800  
24  
125  
3.5  
1.0  
V
A
W
V
mJ  
applications.  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
c
tab  
gate  
2
collector  
emitter  
g
3
tab collector  
1 2 3  
e
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VCE  
VCGR  
±VGE  
IC  
IC  
ICLM  
Collector-emitter voltage  
Collector-gate voltage  
Gate-emitter voltage  
Collector current (DC)  
Collector current (DC)  
Collector Current (Clamped  
Inductive Load)  
-
-5  
-
-
-
-
800  
800  
30  
24  
12  
V
V
V
A
A
A
RGE = 20 kΩ  
-
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tj Tjmax.  
-
40  
V
CL 500 V  
ICM  
Collector current (pulsed peak value, Tj Tjmax.  
-
50  
A
on-state)  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction Temperature  
Tmb = 25 ˚C  
-
-
-
- 55  
-
125  
150  
150  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL  
Rth j-mb  
PARAMETER  
CONDITIONS  
TYP.  
-
MAX.  
1.0  
-
UNIT  
K/W  
K/W  
Junction to mounting base  
Junction to ambient  
-
Rth j-a  
In free air  
60  
March 1993  
1
Rev 1.000  

与BUK856-800A相关器件

型号 品牌 获取价格 描述 数据表
BUK866-400IZ NXP

获取价格

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT
BUK866-400IZ/T3 NXP

获取价格

TRANSISTOR 20 A, 500 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
BUK866-400IZT/R ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | SOT-404
BUK9006-55A NXP

获取价格

N-channel Enhancement mode field-effect power Transistor
BUK9107-40ATC NXP

获取价格

N-channel TrenchPLUS logic level FET
BUK9107-40ATC,118 NXP

获取价格

N-channel TrenchPLUS logic level FET D2PAK 5-Pin
BUK9107-55ATE NXP

获取价格

N-channel TrenchPLUS logic level FET
BUK9107-55ATE,118 NXP

获取价格

N-channel TrenchPLUS logic level FET D2PAK 5-Pin
BUK9120-48TC NXP

获取价格

PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes
BUK9207-30B NXP

获取价格

TrenchMOS logic level FET