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BUH150G PDF预览

BUH150G

更新时间： 2024-09-17 09:02:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关晶体管功率双极晶体管局域网
页数 文件大小 规格书
10页 234K
描述
SWITCHMODE NPN Silicon Planar Power Transistor

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中文翻译

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BUH150G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.25Is Samacsys：N
其他特性：LEADFORM OPTIONS ARE AVAILABLE外壳连接：COLLECTOR
最大集电极电流 (IC)：15 A集电极-发射极最大电压：400 V
配置：SINGLE最小直流电流增益 (hFE)：4
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：150 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：23 MHz
Base Number Matches：1

BUH150G 数据手册

 浏览型号BUH150G的Datasheet PDF文件第2页浏览型号BUH150G的Datasheet PDF文件第3页浏览型号BUH150G的Datasheet PDF文件第4页浏览型号BUH150G的Datasheet PDF文件第5页浏览型号BUH150G的Datasheet PDF文件第6页浏览型号BUH150G的Datasheet PDF文件第7页 
BUH150G  
SWITCHMODEt NPN  
Silicon Planar Power  
Transistor  
The BUH150G has an application specific state−of−art die designed  
for use in 150 Watts Halogen electronic transformers.  
This power transistor is specifically designed to sustain the large  
inrush current during either the startup conditions or under a short  
circuit across the load.  
http://onsemi.com  
POWER TRANSISTOR  
15 AMPERES  
700 VOLTS, 150 WATTS  
Features  
• Improved Efficiency Due to the Low Base Drive Requirements:  
High and Flat DC Current Gain h  
Fast Switching  
FE  
• Robustness Thanks to the Technology Developed to Manufacture  
this Device  
• ON Semiconductor Six Sigma Philosophy Provides Tight and  
Reproducible Parametric Distributions  
• These Devices are Pb−Free and are RoHS Compliant*  
MAXIMUM RATINGS  
TO−220AB  
CASE 221A−09  
STYLE 1  
Rating  
Symbol  
Value  
400  
Unit  
Vdc  
Vdc  
Collector−Emitter Sustaining Voltage  
Collector−Base Breakdown Voltage  
V
CEO  
CBO  
V
700  
1
2
3
Collector−Emitter Breakdown Voltage  
Emitter−Base Voltage  
V
V
700  
10  
Vdc  
Vdc  
Adc  
CES  
EBO  
Collector Current − Continuous  
− Peak (Note 1)  
I
C
15  
25  
I
MARKING DIAGRAM  
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
6
12  
Adc  
B
I
BM  
Total Device Dissipation @ T = 25_C  
P
150  
1.2  
W
W/_C  
_C  
C
D
Derate above 25°C  
BUH150G  
AY WW  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
J
−65 to 150  
stg  
Characteristics  
Symbol  
Max  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case  
R
q
JC  
0.85  
BUH150 = Device Code  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
62.5  
260  
A
Y
= Assembly Location  
= Year  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
WW  
G
= Work Week  
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
BUH150G  
TO−220  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 5  
BUH150/D  
 
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中文翻译

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BUH150G 替代型号

型号 品牌 替代类型 描述 数据表
BUL510 STMICROELECTRONICS

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