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BUH50AU

更新时间： 2024-09-17 21:03:59
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
8页 182K
描述
4A, 500V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

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中文翻译

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BUH50AU 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.82
外壳连接：COLLECTOR最大集电极电流 (IC)：4 A
集电极-发射极最大电压：500 V配置：SINGLE
最小直流电流增益 (hFE)：5JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：4 MHz
Base Number Matches：1

BUH50AU 数据手册

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BUH50G  
SWITCHMODE NPN Silicon  
Planar Power Transistor  
The BUH50G has an application specific state−of−art die designed  
for use in 50 W HALOGEN electronic transformers and  
SWITCHMODE applications.  
http://onsemi.com  
Features  
• Improved Efficiency Due to Low Base Drive Requirements:  
POWER TRANSISTOR  
4 AMPERES  
High and Flat DC Current Gain h  
FE  
Fast Switching  
800 VOLTS, 50 WATTS  
• ON Semiconductor Six Sigma Philosophy Provides Tight and  
Reproductible Parametric Distributions  
• Specified Dynamic Saturation Data  
• Full Characterization at 125°C  
COLLECTOR  
2,4  
• These Devices are Pb−Free and are RoHS Compliant*  
1
BASE  
MAXIMUM RATINGS  
3
Rating  
Symbol  
Value  
Unit  
EMITTER  
Collector−Emitter Sustaining Voltage  
V
500  
Vdc  
CEO  
CBO  
Collector−Base Breakdown Voltage  
Collector−Emitter Breakdown Voltage  
Emitter−Base Voltage  
V
800  
800  
9
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
Adc  
V
V
CES  
4
EBO  
TO−220AB  
CASE 221A−09  
STYLE 1  
Collector Current − Continuous  
Collector Current − Peak (Note 1)  
I
C
4
I
8
CM  
Base Current  
Base Current  
− Continuous  
I
B
2
1
− Peak (Note 1)  
I
4
2
3
BM  
Total Device Dissipation @ T = 25_C  
P
D
50  
0.4  
W
W/_C  
C
Derate above 25°C  
MARKING DIAGRAM  
Operating and Storage Temperature  
T , T  
−65 to 150  
_C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
BUH50G  
AY WW  
THERMAL CHARACTERISTICS  
1
Characteristics  
Symbol  
Max  
2.5  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
BUH50 = Device Code  
q
JC  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
R
62.5  
260  
q
JA  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
= Pb−Free Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
BUH50G  
TO−220  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 7  
BUH50/D  
 
12345678

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