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BUH51 PDF预览

BUH51

更新时间: 2024-11-06 22:17:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
10页 390K
描述
POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS

BUH51 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
风险等级:5.78Is Samacsys:N
最大集电极电流 (IC):3 A基于收集器的最大容量:100 pF
集电极-发射极最大电压:500 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-225AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:50 W
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):23 MHz
最大关闭时间(toff):2000 ns最大开启时间(吨):1000 ns
VCEsat-Max:0.5 VBase Number Matches:1

BUH51 数据手册

 浏览型号BUH51的Datasheet PDF文件第2页浏览型号BUH51的Datasheet PDF文件第3页浏览型号BUH51的Datasheet PDF文件第4页浏览型号BUH51的Datasheet PDF文件第5页浏览型号BUH51的Datasheet PDF文件第6页浏览型号BUH51的Datasheet PDF文件第7页 
Order this document  
by BUH51/D  
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTOR  
3 AMPERES  
800 VOLTS  
50 WATTS  
The BUH51 has an application specific state–of–art die designed for use in  
50 Watts Halogen electronic transformers.  
This power transistor is specifically designed to sustain the large inrush current  
during either the start–up conditions or under a short circuit across the load.  
This High voltage/High speed product exhibits the following main features:  
Improved Efficiency Due to the Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
Robustness Thanks to the Technology Developed to Manufacture  
this Device  
Motorola “6 SIGMA” Philosophy Providing Tight and Reproducible  
Parametric Distributions  
CASE 77–07  
TO–225AA TYPE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
500  
800  
800  
10  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
V
CEO  
CBO  
V
V
CES  
EBO  
Collector Current — Continuous  
— Peak (1)  
I
C
3
8
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
2
4
Adc  
B
I
BM  
*Total Device Dissipation @ T = 25 C  
C
*Derate above 25°C  
P
D
50  
0.4  
Watt  
W/ C  
Operating and Storage Temperature  
T , T  
65 to 150  
C
J
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance  
— Junction to Case  
— Junction to Ambient  
C/W  
R
θJC  
R
θJA  
2.5  
100  
Maximum Lead Temperature for Soldering Purposes:  
1/8from case for 5 seconds  
T
L
260  
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
Motorola, Inc. 1995

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