BUH515D

更新时间： 2024-09-16 22:17:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
7页	75K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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数据手册
替代型号

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BUH515D 数据手册

BUH515D

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

STMicroelectronics PREFERRED

SALESTYPE

■

HIGH VOLTAGE CAPABILITY

U.L. RECOGNISED ISOWATT218 PACKAGE

(U.L. FILE # E81734 (N))

■

NPN TRANSISTOR WITH INTEGRATED

FREEWHEELING DIODE

APPLICATIONS:

■

HORIZONTAL DEFLECTION FOR COLOUR

ISOWATT218

DESCRIPTION

The BUH515D

manufactured using

Multiepitaxial Mesa technology for cost-effective

high performance and uses a Hollow Emitter

structure to enhance switching speeds.

The BUH series is designed for use in horizontal

deflection circuits in televisionsand monitors.

INTERNAL SCHEMATIC DIAGRAM

R Typ. = 12 Ω

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

1500

700

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p< 5 ms)

P_tot

T_stg

T_j

Total Dissipation at T_c= 25 C

^oC

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/7

November 1999

12 3 4 5 6 7

中文翻译

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BUH515D 替代型号

型号	品牌	替代类型	描述	数据表
BU2508AW	NXP	功能相似	Silicon Diffused Power Transistor
BU2508A	NXP	功能相似	Silicon Diffused Power Transistor

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BUH615D	STMICROELECTRONICS	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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