BUH615D

更新时间： 2024-11-08 22:17:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管功率双极晶体管高压局域网
页数	文件大小	规格书
4页	53K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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技术参数
数据手册

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BUH615D 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.85
Is Samacsys：	N	Base Number Matches：	1

BUH615D 数据手册

BUH615D

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

STMicroelectronics PREFERRED

SALESTYPE

■

HIGH VOLTAGE CAPABILITY

NPN TRANSISTOR WITH INTEGRATED

FREEWHEELING DIODE

■

U.L. RECOGNISED ISOWATT218 PACKAGE

(U.L. FILE # E81734 (N))

APPLICATIONS:

■

HORIZONTAL DEFLECTION FOR COLOUR

ISOWATT218

DESCRIPTION

The BUH615D

manufactured

using

Multiepitaxial Mesa technology for cost-effective

high performance and uses a Hollow Emitter

structure to enhance switching speeds.

The BUH series is designed for use in horizontal

deflection circuits in televisions and monitors.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

1500

700

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p< 5 ms)

P_tot

Total Dissipation at T_c= 25 C

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/4

December 1999

12 3 4

中文翻译

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