BUJ100

更新时间： 2024-11-08 22:17:35

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
8页	65K
描述
Silicon Diffused Power Transistor

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中文翻译

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BUJ100 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ100

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use

in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CBO

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

700

400

1.0

2.0

Collector-Base voltage (open emitter)

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

P_tot

T_lead≤ 25 ˚C

V_CEsat

h_FE

I_C= 0.75 A;I_B= 150mA

I_C= 0.75 A;V_CE= 5 V

I_C= 1.0 A;I_BON= 200mA

0.24

1.0

t_fi

Fall time (Inductive)

PINNING - TO92

PIN CONFIGURATION

SYMBOL

DESCRIPTION

Emitter

Collector

Base

2 1

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

V_CBO

I_C

Collector to emitter voltage

V_BE= 0 V

700

400

700

1.0

2.0

0.5

1.0

Collector to emitter voltage (open base)

Collector to base voltage (open emitter)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

I_B

I_BM

P_tot

T_stg

T_j

Base current peak value

Total power dissipation

T_lead≤ 25 ˚C

˚C

Storage temperature

Junction temperature

-65

150

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-lead}

Thermal resistance

junction to lead

K/W

R_{th j-a}

Thermal resistance

Junction to ambient

pcb mounted; lead length = 4mm

150

K/W

September 1999

Rev 1.000

12 3 4 5 6 7 8

中文翻译

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