Datasheet > BUH51/D

BUH51/D

更新时间： 2024-11-06 23:37:19

品牌	Logo	应用领域
其他 - ETC		晶体开关晶体管
页数	文件大小	规格书
12页	184K
描述
SWITCHMODE? NPN Silicon Planar Power Transistor

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BUH51/D 数据手册

ON Semiconductort

BUH51

SWITCHMODEt NPN Silicon

Planar Power Transistor

POWER TRANSISTOR

3 AMPERES

The BUH51 has an application specific state–of–art die designed for

use in 50 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large

inrush current during either the start–up conditions or under a short

circuit across the load.

800 VOLTS

50 WATTS

This High voltage/High speed product exhibits the following main

features:

• Improved Efficiency Due to the Low Base Drive Requirements:

High and Flat DC Current Gain h

Fast Switching

• Robustness Thanks to the Technology Developed to Manufacture

this Device

• ON Semiconductor Six Sigma Philosophy Providing Tight and

Reproducible

Parametric Distributions

MAXIMUM RATINGS

Rating

Collector–Emitter Sustaining Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

Symbol

Value

500

800

Unit

Vdc

Adc

CASE 77–09

TO–225AA TYPE

CEO

CBO

CES

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

Base Current — Peak (1)

Adc

*Total Device Dissipation @ T = 25_C

0.4

Watt

W/_C

*Derate above 25°C

Operating and Storage Temperature

T , T

–65 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction to Case

— Junction to Ambient

_C/W

2.5

100

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

260

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 2

BUH51/D

12 3 4 5 6 7...12

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