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BUH50/D PDF预览

BUH50/D

更新时间: 2024-11-06 23:37:19
品牌 Logo 应用领域
其他 - ETC 晶体开关晶体管
页数 文件大小 规格书
12页 231K
描述
SWITCHMODE? NPN Silicon Planar Power Transistor

BUH50/D 数据手册

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ON Semiconductort  
BUH50  
SWITCHMODEt NPN Silicon  
Planar Power Transistor  
POWER TRANSISTOR  
4 AMPERES  
The BUH50 has an application specific state–of–art die designed for  
use in 50 Watts HALOGEN electronic transformers and  
SWITCHMODE applications.  
800 VOLTS  
50 WATTS  
This high voltage/high speed transistor exhibits the following main  
feature:  
Improved Efficiency Due to Low Base Drive Requirements:  
High and Flat DC Current Gain h  
FE  
Fast Switching  
ON Semiconductor Six Sigma Philosophy Provides Tight and  
Reproductible Parametric Distributions  
Specified Dynamic Saturation Data  
Full Characterization at 125°C  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
Symbol  
Value  
500  
800  
800  
9
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
CES  
EBO  
CASE 221A–09  
TO–220AB  
V
Collector Current — Continuous  
— Peak (1)  
I
C
4
8
I
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
B
2
4
Adc  
BM  
*Total Device Dissipation @ T = 25_C  
P
50  
0.4  
Watt  
W/_C  
_C  
C
D
*Derate above 25°C  
Operating and Storage Temperature  
T , T  
J
–65 to 150  
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance  
— Junction to Case  
— Junction to Ambient  
_C/W  
R
R
2.5  
62.5  
θ
JC  
JA  
θ
Maximum Lead Temperature for Soldering Purposes:  
1/8from case for 5 seconds  
T
L
260  
_C  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
BUH50/D  

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