Datasheet > BUH417D

BUH417D

更新时间： 2024-09-17 06:44:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	148K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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BUH417D 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BUH417D

DESCRIPTION

·With TO-3PML package

·High voltage

·High speed switching

·Built-in damper diode

APPLICATIONS

·Switching power supply for TV’s

and monitors

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3PML) and symbol

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current -peak

Base current (DC)

CONDITIONS

VALUE

UNIT

Open emitter

Open base

1500

700

Open collector

I_CM

t_p<5ms

I_B

I_BM

Base current -peak

t_p<5ms

T_C=25ꢀ

P_tot

Total power dissipation

Junction temperature

Storage temperature

ꢀ

T_j

150

-65~150

T_stg

ꢀ

12 3

中文翻译

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