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BUH50

更新时间: 2024-09-16 22:17:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
10页 481K
描述
POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS

BUH50 数据手册

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Order this document  
by BUH50/D  
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTOR  
4 AMPERES  
800 VOLTS  
50 WATTS  
The BUH50 has an application specific state–of–art die designed for use in  
50 Watts HALOGEN electronic transformers and switchmode applications.  
This high voltage/high speed transistor exhibits the following main feature:  
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
Motorola “6SIGMA” Philosophy Provides Tight and Reproductible  
Parametric Distributions  
Specified Dynamic Saturation Data  
Full Characterization at 125°C  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
500  
800  
800  
9
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
V
CEO  
CBO  
V
CES  
EBO  
V
Collector Current — Continuous  
— Peak (1)  
I
C
4
8
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
2
4
Adc  
B
I
BM  
*Total Device Dissipation @ T = 25 C  
C
*Derate above 25°C  
P
D
50  
0.4  
Watt  
W/ C  
Operating and Storage Temperature  
T , T  
65 to 150  
C
J
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance  
— Junction to Case  
— Junction to Ambient  
C/W  
R
θJC  
R
θJA  
2.5  
62.5  
Maximum Lead Temperature for Soldering Purposes:  
1/8from case for 5 seconds  
T
L
260  
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Motorola, Inc. 1995

BUH50 替代型号

型号 品牌 替代类型 描述 数据表
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完全替代

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