5秒后页面跳转
捷配首页

Datasheet > BUH50AN
BUH50AN PDF预览

BUH50AN

更新时间： 2024-11-09 21:03:59
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
8页 182K
描述
4A, 500V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

阅读下载

中文翻译

获取价格

BUH50AN 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.82
外壳连接：COLLECTOR最大集电极电流 (IC)：4 A
集电极-发射极最大电压：500 V配置：SINGLE
最小直流电流增益 (hFE)：5JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：4 MHz
Base Number Matches：1

BUH50AN 数据手册

 浏览型号BUH50AN的Datasheet PDF文件第2页浏览型号BUH50AN的Datasheet PDF文件第3页浏览型号BUH50AN的Datasheet PDF文件第4页浏览型号BUH50AN的Datasheet PDF文件第5页浏览型号BUH50AN的Datasheet PDF文件第6页浏览型号BUH50AN的Datasheet PDF文件第7页 
BUH50G  
SWITCHMODE NPN Silicon  
Planar Power Transistor  
The BUH50G has an application specific state−of−art die designed  
for use in 50 W HALOGEN electronic transformers and  
SWITCHMODE applications.  
http://onsemi.com  
Features  
• Improved Efficiency Due to Low Base Drive Requirements:  
POWER TRANSISTOR  
4 AMPERES  
High and Flat DC Current Gain h  
FE  
Fast Switching  
800 VOLTS, 50 WATTS  
• ON Semiconductor Six Sigma Philosophy Provides Tight and  
Reproductible Parametric Distributions  
• Specified Dynamic Saturation Data  
• Full Characterization at 125°C  
COLLECTOR  
2,4  
• These Devices are Pb−Free and are RoHS Compliant*  
1
BASE  
MAXIMUM RATINGS  
3
Rating  
Symbol  
Value  
Unit  
EMITTER  
Collector−Emitter Sustaining Voltage  
V
500  
Vdc  
CEO  
CBO  
Collector−Base Breakdown Voltage  
Collector−Emitter Breakdown Voltage  
Emitter−Base Voltage  
V
800  
800  
9
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
Adc  
V
V
CES  
4
EBO  
TO−220AB  
CASE 221A−09  
STYLE 1  
Collector Current − Continuous  
Collector Current − Peak (Note 1)  
I
C
4
I
8
CM  
Base Current  
Base Current  
− Continuous  
I
B
2
1
− Peak (Note 1)  
I
4
2
3
BM  
Total Device Dissipation @ T = 25_C  
P
D
50  
0.4  
W
W/_C  
C
Derate above 25°C  
MARKING DIAGRAM  
Operating and Storage Temperature  
T , T  
−65 to 150  
_C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
BUH50G  
AY WW  
THERMAL CHARACTERISTICS  
1
Characteristics  
Symbol  
Max  
2.5  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
BUH50 = Device Code  
q
JC  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
R
62.5  
260  
q
JA  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
= Pb−Free Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
BUH50G  
TO−220  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 7  
BUH50/D  
 
12345678

中文翻译

下载PDF

与BUH50AN相关器件

型号 品牌 获取价格 描述 数据表
BUH50AS ONSEMI

获取价格

 		暂无描述
BUH50AU ONSEMI

获取价格

 		4A, 500V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
BUH50BC ONSEMI

获取价格

 		TRANSISTOR 4 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN, BIP General Purpose Pow
BUH50BD ONSEMI

获取价格

 		4A, 500V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
BUH50BG ONSEMI

获取价格

 		4A, 500V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
BUH50BU ONSEMI

获取价格

 		TRANSISTOR 4 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN, BIP General Purpose Pow
BUH50BV ONSEMI

获取价格

 		4A, 500V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
BUH50DW ONSEMI

获取价格

 		4A, 500V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
BUH50G ONSEMI

获取价格

 		SWITCHMODE NPN Silicon Planar Power Transistor
BUH51 ONSEMI

获取价格

 		POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS

与BUH50AN相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证