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BUH313D PDF预览

BUH313D

更新时间: 2024-11-07 06:44:39
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 109K
描述
isc Silicon NPN Power Transistor

BUH313D 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:NBase Number Matches:1

BUH313D 数据手册

 浏览型号BUH313D的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUH313D  
DESCRIPTION  
·High Switching Speed  
·High Voltage  
·Built-in Integrated Diode  
APPLICATIONS  
·Horizontal deflection stage in standard and high resolution  
Displays for TV’s and monitors.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Collector Current-Peak  
Base Current  
VALUE  
UNIT  
V
1300  
600  
V
10  
V
5
A
ICM  
8
A
IB  
3
5
A
IBM  
Base Current-Peak  
A
Collector Power Dissipation  
@TC=25  
PC  
50  
W
Junction Temperature  
Storage Temperature  
150  
TJ  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
2.5  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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