BUH150DW

更新时间： 2024-09-17 13:05:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
10页	465K
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BUH150DW 数据手册

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SEMICONDUCTOR TECHNICAL DATA

POWER TRANSISTOR

15 AMPERES

700 VOLTS

150 WATTS

The BUH150 has an application specific state–of–art die designed for use in

150 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large inrush current

during either the start–up conditions or under a short circuit across the load.

This High voltage/High speed product exhibits the following main features:

•

Improved Efficiency Due to the Low Base Drive Requirements:

— High and Flat DC Current Gain h

— Fast Switching

•

Robustness Thanks to the Technology Developed to Manufacture

this Device

Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible

Parametric Distributions

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

400

700

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO

CBO

CES

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

Base Current — Peak (1)

Adc

*Total Device Dissipation @ T = 25 C

*Derate above 25°C

150

1.2

Watt

W/ C

Operating and Storage Temperature

T , T

–65 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction to Case

— Junction to Ambient

C/W

θJC

θJA

0.85

62.5

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

260

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7...10

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