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BU508AT

更新时间: 2024-11-14 03:23:11
品牌 Logo 应用领域
CDIL 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
3页 98K
描述
NPN SILICON PLANAR POWER TRANSISTOR

BU508AT 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:5.66Is Samacsys:N
最大集电极电流 (IC):8 A集电极-发射极最大电压:700 V
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:56 W
最大功率耗散 (Abs):56 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICON标称过渡频率 (fT):7 MHz
VCEsat-Max:1 VBase Number Matches:1

BU508AT 数据手册

 浏览型号BU508AT的Datasheet PDF文件第2页浏览型号BU508AT的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
NPN SILICON PLANAR POWER TRANSISTOR  
BU508AT  
TO-220  
Plastic Package  
High Voltage, High-Speed Switching Transistor  
Intended for use in Horizontal Deflection Circuits of Colour Televisions  
ABSOLUTE MAXIMUM RATINGS  
VALUE  
UNIT  
DESCRIPTION  
SYMBOL  
VCES  
1500  
V
Collector Emitter Voltage  
VCEO  
IC  
ICM  
IB  
700  
8
15  
4
V
A
A
A
A
Collector Emitter Voltage  
Collector Current (DC)  
Collector Current (Peak)  
Base Current (DC)  
IBM  
6
Base Current (Peak)  
Reverse Base Current (DC or average  
over any 20 ms period)  
-IB(AV)  
100  
mA  
*-IBM  
Ptot  
5
A
Reverse Base Current (Peak Value)  
Power Dissipation upto Tc=25ºC  
Operating and Storage Junction  
Temperature Range  
60  
W
Tj, Tstg  
- 65 to +150  
ºC  
*Turn off Current  
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
TEST CONDITION  
MIN  
TYP MAX  
UNIT  
**ICES  
VCE=VCES max, VBE=0  
Collector Cut off Current  
1.0  
mA  
Tj=125ºC  
VCE=VCES max, VBE=0  
VEB=6V, IC=0  
2.0  
10  
mA  
mA  
V
IEBO  
*VCEO(sus)  
*hFE  
Emitter Cut off Current  
IC=100mA, IB=0, L=25mH  
IC=4.5A, VCE=5V  
Collector Emitter Sustaining Voltage  
DC Current Gain  
700  
2.25  
*VCE(sat)  
*VBE(sat)  
fT  
IC=4.5A, IB=2A  
IC=4.5A, IB=2A  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
Transition Frequency  
1.0  
V
V
1.3  
IC=0.1A, VCE=5V, f=5MHz  
IE=ie=0, VCB=10V, f=1MHz  
7
125  
MHz  
pF  
CC  
Collector Capacitance  
**Measured with half-sinewave Voltage (curve tracer)  
*Pulse Test: Pulse Width=5ms, Duty Cycle<10%  
Data Sheet  
Page 1 of 3  
Continental Device India Limited  

BU508AT 替代型号

型号 品牌 替代类型 描述 数据表
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