Datasheet > BU508DF/B

BU508DF/B

更新时间： 2024-11-13 23:36:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	47K
描述
TRANSISTOR LEISTUNGS BIPOLAR

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中文翻译

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BU508DF/B 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DF

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency

diode, primarily for use in horizontal deflection circuits of colour television receivers.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

700

1.0

2.0

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Diode forward voltage

P_tot

V_CEsat

I_Csat

V_F

T_hs≤ 25 ˚C

I_C= 4.5 A; I_B= 1.6 A

f = 16kHz

4.5

1.6

0.7

I_F= 4.5 A

t_f

Fall time

I_Csat= 4.5 A; f = 16kHz

µs

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

base

collector

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

700

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

I_B

Collector current peak value

Base current (DC)

150

I_BM

P_tot

T_stg

T_j

Base current peak value

Total power dissipation

Storage temperature

T_hs≤ 25 ˚C

˚C

-65

Junction temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Junction to heatsink

Junction to ambient

without heatsink compound

with heatsink compound

in free air

3.7

2.8

K/W

July 1998

Rev 1.200

12 3 4 5 6 7

中文翻译

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