BU508F

更新时间： 2024-11-14 03:23:11

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
2页	60K
描述
NPN POWER TRANSISTORS

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中文翻译

获取价格

技术参数
数据手册

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BU508F 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.82

BU508F 数据手册

Transys

Electronics

I M I T E D

NPN POWER TRANSISTORS

BU508F, BU508AF,

BU508DF

TO- 3P Fully Isolated

Plastic Package

Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV

ABSOLUTE MAXIMUM RATINGS

VALUE

DESCRIPTION

SYMBOL

V_CES

V_CEO

V_EBO

I_C

UNIT

1500

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current

700

I_CM

Collector Peak Current

Total Power Dissipation upto T_a=25º C

T_c=25º C

P_tot

T_stg

T_j

- 65 to +150

Storage Temperature Range

ºC

150

Max Operating Junction Temperature

THERMAL RESISTANCE

R_{th (j-c)}

Thermal Resistance Junction - Case

2.08

ºC/W

ELECTRICAL CHARACTERISTICS (T_C=25ºC unless specified otherwise)

TEST CONDITIONS

V_CE=V_CES, V_BE=0

I_B=0, I_C=100mA

I_E=10mA, I_C=0

BU508F, AF

MIN

TYP

MAX

DESCRIPTION

SYMBOL

UNIT

I_CES

1.0

Collector Cut off Current

Collector Emitter Sustaining Voltage

Emitter Base Voltage

V_{CEO (sus)}

V_EBO

700

5.0

I_EBO

V_EB=5V, I_C=0

BU508DF

300

Emitter Cut-off Current

h_FE

V_F

I_C=4.5A, V_CE=5V

I_F=4.0A

DC Current Gain

2.25

2.0

1.0

5.0

1.5

Diode forward Voltage

BU508DF

V_{CE(sat) *}

I_C=4.5A, I_B=2.0A

BU508AF, DF

I_C=4.5A, I_B=2.0A

BU508F

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

V_{BE(sat) *}

I_C=4.5A, I_B=2.0A

SWITCHING TIME

Storage Time

Fall Time

t_s

t_f

I_C=4.5A,h_FE=2.5,V_CC=140V

7.0

0.5

L_C=0.9mH, L_B=3mH

* Pulse test: Pulse Duration <300ms , Duty cycle < 1.5%.

中文翻译

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