BU508DW

更新时间： 2024-11-14 09:02:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	48K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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BU508DW 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU508DW

DESCRIPTION

·With TO-247 package

·High voltage,high speed

·With integrated efficiency diode

APPLICATIONS

·For use in horizontal deflection circuits of

colour TV receivers.

PINNING

DESCRIPTION

Base

Collector

Emitter

ABSOLUTE MAXIMUM RATINGS(T_C=25℃)

SYMBOL

V_CBO

V_CEO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

CONDITIONS

Open emitter

VALUE

1500

700

UNIT

Open base

I_CP

I_B

I_BM

Base current (Pulse)

Total power dissipation

Junction temperature

Storage temperature

P_tot

T_C=25℃

125

150

-65~150

℃

T_j

T_stg

12 3

中文翻译

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