Datasheet > BU508DF_12

BU508DF_12

更新时间： 2024-11-14 12:53:15

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	109K
描述
SILICON DIFFUSED POWER TRANSISTOR

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数据手册

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BU508DF_12 数据手册

SEMICONDUCTORS

NPN BU508DF

SILICON DIFFUSED POWER TRANSISTOR

The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated

efficiency diode.

It is intended for high voltage, high-speed.

Primarily for use in horizontal deflection circuits of colour television receivers.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

I_CM

I_B

Collector-Base Voltage

1500

700

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Current Peak

Base Current

Base Current Peak

Total Dissipation

I_BM

P_T

@ T_mb< 25°

t_J

t_s

Junction Temperature

Storage Temperature range

150

-65 to +150

°C

THERMAL CHARACTERISTICS

Value

Symbol

Ratings

Conditions

Unit

Typ. Max

Junction To Heatsink

Junction Ambient

Without Heatsink Compound

With Heatsink Compound

In Free Air

3.7

2.8

R_thJC

K/W

15/10/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

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与BU508DF_12相关器件

型号	品牌	获取价格	描述	数据表
BU508DFI	ISC	获取价格	Silicon NPN Power Transistors
BU508DFI	SAVANTIC	获取价格	Silicon NPN Power Transistors
BU508DFI	STMICROELECTRONICS	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
BU508DLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic
BU508DR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 700V V(BR)CEO \| 8A I(C) \| TO-218VAR
BU508DW	ISC	获取价格	Silicon NPN Power Transistors
BU508DW	SAVANTIC	获取价格	Silicon NPN Power Transistors
BU508DW	NXP	获取价格	Silicon Diffused Power Transistor
BU508DX	ISC	获取价格	Silicon NPN Power Transistors
BU508DX	SAVANTIC	获取价格	Silicon NPN Power Transistors