BU508DW

更新时间： 2024-11-13 22:27:59

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
7页	70K
描述
Silicon Diffused Power Transistor

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BU508DW 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DW

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily

for use in horizontal deflection circuits of colour television receivers.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

700

125

1.0

2.0

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Diode forward voltage

P_tot

V_CEsat

I_Csat

V_F

T_mb≤ 25 ˚C

I_C= 4.5 A; I_B= 1.6 A

f = 16kHz

4.5

1.6

0.7

I_F= 4.5 A

t_f

Fall time

I_Csat= 4.5 A; f = 16kHz

µs

PINNING - SOT429

PIN CONFIGURATION

SYMBOL

DESCRIPTION

base

collector

emitter

tab collector

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

700

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

I_B

Collector current peak value

Base current (DC)

125

150

I_BM

P_tot

T_stg

T_j

Base current peak value

Total power dissipation

Storage temperature

T_mb≤ 25 ˚C

˚C

-65

Junction temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Junction to mounting base

Junction to ambient

1.0

K/W

in free air

July 1998

Rev 1.200

12 3 4 5 6 7

中文翻译

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