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BU508DF PDF预览

BU508DF

更新时间: 2024-11-14 06:44:35
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
2页 229K
描述
SILICON DIFFUSED POWER TRANSISTORS

BU508DF 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Base Number Matches:1

BU508DF 数据手册

 浏览型号BU508DF的Datasheet PDF文件第2页 
NPN BU508DF  
SILICON DIFFUSED POWER TRANSISTORS  
The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for  
the BU508DF).  
They are a high voltage, high speed switching and they are intended for use in horizontal deflexion  
circuits of colour television receivers.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Collector Current  
IB = 0  
VCEO  
700  
V
VBE = 0  
VCESM  
IC  
1500  
V
8
A
Collector Peak Current  
Base Current  
ICM  
IB  
15  
A
4
A
Collector Current saturation  
Base Peak Current  
ICsat  
IBM  
Pt  
4.5  
A
6
34  
A
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
@ TC = 25°  
Watts  
°C  
°C  
TJ  
150  
TStg  
-65 to +150  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
Thermal Resistance, Junction to Mounting Base  
RthJ-mb  
RthJ-h  
RthJ-h  
RthJ-a  
1.0  
3.7  
2.8  
35  
K/W  
K/W  
K/W  
K/W  
Thermal Resistance, Junction to Hexternal Heatsink  
Thermal Resistance, Junction to Hexternal Heatsink  
Thermal Resistance, Junction to Ambient  
ISOLATION  
Symbol  
VISOL  
Ratings  
Value  
1500  
21  
Unit  
V
Isolation Voltage from all terminals to external  
heatsink (peak value)  
Isolation capacitance from collector to external  
heatsink  
Typ.  
CISOL  
pF  
*
COMSET SEMICONDUCTORS  
1/2  

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