Datasheet > BU508D

BU508D

更新时间： 2024-11-14 06:44:35

品牌	Logo	应用领域
SAVANTIC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	137K
描述
Silicon NPN Power Transistors

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中文翻译

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BU508D 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BU508D

DESCRIPTION

·With TO-3PN package

·High voltage

·Built-in damper diode

APPLICATIONS

·For use in large screen colour

deflection circuits.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (Pulse)

Base current

CONDITIONS

Open emitter

VALUE

1500

700

UNIT

Open base

Open collector

I_CM

I_B

2.5

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

125

150

-65-150

ꢀ

T_j

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.0

ꢀ/W

12 3

中文翻译

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