Datasheet > BU508D

BU508D

更新时间： 2024-11-13 22:27:59

品牌	Logo	应用领域
MICRO-ELECTRONICS		晶体晶体管开关高压局域网
页数	文件大小	规格书
8页	99K
描述
HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR

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中文翻译

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数据手册

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BU508D 数据手册

BU208D/508D/508DFI

HIGH VOLTAGE FASTSWITCHING NPN

POWER TRANSISTOR

■

SGS-THOMSON PREFERRED SALESTYPES

HIGH VOLTAGE CAPABILITY

U.L. RECOGNISED ISOWATT218 PACKAGE

(U.L. FILE # E81734 (N)

TO-3

■

JEDEC TO-3 METAL CASE

NPN TRANSISTOR WITH INTEGRATED

FREEWHEELING DIODE

APPLICATIONS:

■

HORIZONTAL DEFLECTION FOR COLOUR

DESCRIPTION

The BU208D, BU508D and BU508DFI are

manufactured

using

Multiepitaxial

Mesa

TO-218

ISOWATT218

technology for cost-effective high performance

and uses a Hollow Emitter structure to enhance

switching speeds.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

1500

700

I_CM

Collector Peak Current (t_p< 5 ms)

TO - 3

TO - 218 ISOWATT218

P_tot

T_stg

T_j

Total Dissipation at T_c= 25 ^oC

Storage Temperature

150

125

-65 to 150

150

^oC

-65 to 150 -65 to 150

150 150

Max. Operating Junction Temperature

1/8

June 1996

12 3 4 5 6 7 8

中文翻译

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