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BU508AFTBTU_NL

更新时间: 2024-11-14 21:15:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网放大器晶体管
页数 文件大小 规格书
4页 48K
描述
Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN

BU508AFTBTU_NL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-3PF
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.22
外壳连接:ISOLATED最大集电极电流 (IC):5 A
集电极-发射极最大电压:700 V配置:SINGLE
最小直流电流增益 (hFE):2.25JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BU508AFTBTU_NL 数据手册

 浏览型号BU508AFTBTU_NL的Datasheet PDF文件第2页浏览型号BU508AFTBTU_NL的Datasheet PDF文件第3页浏览型号BU508AFTBTU_NL的Datasheet PDF文件第4页 
BU508AF  
TV Horizontal Output Applications  
TO-3PF  
1.Base 2.Collector 3.Emitter  
1
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
1500  
CES  
CEO  
EBO  
700  
V
5
V
I
I
Collector Current (DC)  
*Collector Current (Pulse)  
5
15  
A
C
A
CP  
P
Collector Dissipation (T =25°C)  
60  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
= 100mA, I = 0  
700  
5
V
CEO  
C
B
BV  
I = 10mA, I = 0  
V
EBO  
CES  
E
C
I
V
V
V
= 1500V, V = 0  
1
mA  
mA  
CE  
EB  
CE  
BE  
I
Emitter Cut-off Current  
= 5V, I = 0  
10  
EBO  
C
h
* DC Current Gain  
= 5V, I = 4.5A  
2.25  
FE  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
I
I
= 4.5A, I = 2A  
1
V
V
CE  
C
C
B
(sat)  
= 4.5A, I = 2A  
1.5  
BE  
B
* Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed  
©2002 Fairchild Semiconductor Corporation  
Rev. B, December 2002  

BU508AFTBTU_NL 替代型号

型号 品牌 替代类型 描述 数据表
BU508AFTBTU FAIRCHILD

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Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,

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