是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | PLASTIC, SMD, 4 PIN | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.65 |
外壳连接: | SUBSTRATE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 10 V | 最大漏极电流 (Abs) (ID): | 0.05 A |
最大漏极电流 (ID): | 0.05 A | 最大漏源导通电阻: | 120 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.23 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS83-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Sig | |
BSS83-TAPE-7 | NXP |
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TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Sig | |
BSS83TRL | YAGEO |
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Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Meta | |
BSS83TRL13 | YAGEO |
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Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Meta | |
BSS83TRL13 | NXP |
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TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Sig | |
BSS84 | NXP |
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P-channel enhancement mode vertical D-MOS transistor | |
BSS84 | ZETEX |
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P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
BSS84 | INFINEON |
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SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) | |
BSS84 | FAIRCHILD |
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P-Channel Enhancement Mode Field Effect Transistor | |
BSS84 | CET |
获取价格 |
P-Channel Enhancement Mode MOSFET |